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Hot-carrier Reliability Characterization of Advanced CMOS Devices and RF Circuits

April 1 @ 2:00 pm - 3:00 pm

Abstract: Hot-carrier reliability is critical to operation of NFETs over the stipulated lifetime of CMOS based IC products. Due to continuous shrink in MOSFET gate length and disproportionate supply voltage scaling, hot-carrier degradation (HCD) has become a growing concern in advanced CMOS technology. In this talk, I will start with basics of HCD and its DC/pulsed- characterization methodology. Thereafter, I will show results of HCD analysis on a few CMOS technologies. As RFCMOS is becoming increasingly popular, reliability performance of CMOS devices and circuits must be assessed under RF operating conditions in terms of figures of merit (FOM) relevant to RF. I will present results from some of our recent publications on RF reliability measurements and modeling. Bio: Abhisek Dixit obtained PhD and MTech degrees from K. U. Leuven, Belgium (2007) and IIT Bombay, India (2002) respectively. From 2007 to 2013 he was with IBM SRDC as an advisory research engineer and worked on characterization and compact modelling of various CMOS technologies for server and value-added foundry products. He joined Indian Institute of Technology (IIT) Delhi in 2013, where he is currently the NXP (Philips) Chair Professor of Microelectronics and VLSI Design Tools and Technology in the Department of Electrical Engineering. His research interests include modeling and characterization of silicon-based qubits and CMOS devices at cryogenic temperature, radiation hardness, reliability of RF-CMOS devices and circuits. He has 6 US patents and more than 100 co-authored publications in international conferences and journals. He is an IEEE-EDS distinguished lecturer, IEEE senior member, Editor of IEEE Transactions on Device and Materials Reliability, and Fellow of IET, IETE, IE(I). Room: 260, Bldg: Dreese, 2015 Neil Avenue, Columbus, Ohio, United States, 43210, Virtual: