Abstract: Hot-carrier reliability is critical to operation of NFETs over the stipulated lifetime of CMOS based IC products. Due to continuous shrink in MOSFET gate length and disproportionate supply voltage scaling, hot-carrier degradation (HCD) has become a growing concern in advanced CMOS technology. In this talk, I will start with basics of HCD and its DC/pulsed- characterization methodology. Thereafter, I will show results of HCD analysis on a few CMOS technologies. As RFCMOS is becoming increasingly popular, reliability performance of…